Vishay N-Channel MOSFET, 28 A, 100 V, 8-Pin PowerPAK 1212-8 SIS892ADN-T1-GE3

Vishay N-Channel MOSFET, 28 A, 100 V, 8-Pin PowerPAK 1212-8 SIS892ADN-T1-GE3

Vishay

Vishay N-Channel MOSFET, 28 A, 100 V, 8-Pin PowerPAK 1212-8 SIS892ADN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 47 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 52 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 3.4mm, Maximum Operating Temperature: +150 °C

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