IXYS HiperFET, Polar N-Channel MOSFET, 24 A, 800 V, 3-Pin TO-247AD IXFH24N80P
IXYS
IXYS HiperFET, Polar N-Channel MOSFET, 24 A, 800 V, 3-Pin TO-247AD IXFH24N80P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 400 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 650 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 16.26mm, Maximum Operating Temperature: +150 °C
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| shop | Price | Action |
|---|---|---|
| RS Components Ltd- UK | 223,34 GBP | Go to shop |
