Infineon HEXFET P-Channel MOSFET, 19 A, 55 V, 3-Pin TO-220AB IRF9Z34NPBF
Infineon
Infineon HEXFET P-Channel MOSFET, 19 A, 55 V, 3-Pin TO-220AB IRF9Z34NPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 100 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 68 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.54mm
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| shop | Price | Action |
|---|---|---|
| RS Components Ltd- UK | 0,64 GBP | Go to shop |
