Infineon HEXFET N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-220AB IRF3205ZPBF
Infineon
Infineon HEXFET N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-220AB IRF3205ZPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 170 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.54mm
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| shop | Price | Action |
|---|---|---|
| RS Components Ltd- UK | 2,88 GBP | Go to shop |
