Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-8SH SISHA10DN-T1-GE3

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-8SH SISHA10DN-T1-GE3

Vishay

Vishay N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-8SH SISHA10DN-T1-GE3, Package Type: PowerPAK 1212-SH, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Forward Diode Voltage: 1.2V

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