400-1100nm 800um 1064nm Responsivity 0.37A/W Enhanced TO46 Avalanche Photodiode

Q-BAIHE

Title\uFF1A\n1064nm enhanced 800um TO46 APD avalanche photodetector photodiode\n\nSpecification:\n\nWavelength:400-1100nm\nOperating voltage:0.95x VBR\nOperating temperature:-40~+85\u2103 \nStorage temperature:-40~+100\u2103 \nSoldering temperature(time):260\u2103(10s)\nThe opto-eletronic characteritics:(T=22\u00B13\u2103)\nResponse Spectrum: \u03BB 400\uFF5E1100 nm\nActive diameter:\u03C6 \u2014 800 \u03BCm\nReponsivity:Re \u03BB=905nm, 1\u03BCw, M=1   0.67; A/W\n\n\u03BB=1064nm, 1\u03BCw, M=1  0.37 A/W\n\nMultiplication gain:\n\u03BB=1064nm, 1\u03BCw, 0.8VBR 100\n\u03BB=1064nm, 1\u03BCw, 0.85VBR 200\nResponse time:Tr M=100,RL=50\u03A9,\u03BB=1064nm . 3 ns\n\nFeatures:\n\uF06C High reliability, low dark current\n\uF06C Top illumination Planar APD\n\uF06C High Gain up to M=400\n\uF06C Wavelength 400-1100nm\n\uF06C Hermetic TO46 Can or with receptacle \nor with fiber coupling\n\nApplications:\n\uF06C Ultra Weak pulse optical detecting \n\uF06C Laser lidar, laser ra: