850nm 1000mW Infrared 5.6mm TO-18 Laser Diode 1W AlGaAs Semiconductor IR LD

850nm 1000mW Infrared 5.6mm TO-18 Laser Diode 1W AlGaAs Semiconductor IR LD

JOLOOYO

850nm 1000mW IR 5.6mm TO18 Laser Diode\n\nFeatures:                                                                           .\nWavelength: 850nm (\u00B15nm)\nOutput power: 1W\nThreshold current: <600mA\nForward current: <1400mA\nForward voltage: 1.9V-2.2V\n\nDetails:\n850nm AlGaAs quantum well fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability.\nIt is CW multi-mode injection semiconductor laser available on C-mount, B-mount and Q-mount. It's suitable for application in various opto-electronic systems.\n\nPackage:\n1x 8s

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