Integrated Power Devices and TCAD Simulation

CRC Press

Integrated Power Devices and TCAD SimulationAuthor(s): Yue Fu, Zhanming Li, Wai Tung Ng, Johnny K.O. Sin\nFormat: Paperback\nPublisher: Taylor & Francis Ltd, United Kingdom\nImprint: CRC Press\nISBN-13: 9781138071858, 978-1138071858\nSynopsis\nFrom power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. \n\nInstead of abstract theoretical treatments and daunting equations, the text uses technology computer-aid.