Gallium Nitride (GaN)
CRC Press
Gallium Nitride (GaN)Physics, Devices, and Technology\nAuthor(s): Farid Medjdoub\nFormat: Paperback\nPublisher: Taylor & Francis Ltd, United Kingdom\nImprint: CRC Press\nISBN-13: 9781138893351, 978-1138893351\nSynopsis\nAddresses a Growing Need for High-Power and High-Frequency Transistors\n\nGallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors.\n\nExplores Recent Progress in High-Frequency GaN Technology\n\nWritten by a panel of a.
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