SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructur... - 9781420066852

CRC Press

SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure DevicesAuthor(s): John D. Cressler\nFormat: Hardback\nPublisher: Taylor & Francis Inc, United States\nImprint: CRC Press Inc\nISBN-13: 9781420066852, 978-1420066852\nSynopsis\nWhat seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor black arts associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications.\n\nDrawn from the comprehensive and well-rev.