IXYS HiperFET, Polar N-Channel MOSFET, 50 A, 200 V, 3-Pin TO-220 IXTP50N20P
IXYS
IXYS HiperFET, Polar N-Channel MOSFET, 50 A, 200 V, 3-Pin TO-220 IXTP50N20P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 60 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 360 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.66mm, Maximum Operating Temperature: +175 °C
Compare prices (1 shop)
| shop | Price | Action |
|---|---|---|
| RS Components Ltd- UK | 150,48 GBP | Go to shop |
