IXYS HiperFET, Polar N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 IXFP12N50P
IXYS
IXYS HiperFET, Polar N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 IXFP12N50P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 500 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 10.66mm, Maximum Operating Temperature: +150 °C
Compare prices (1 shop)
| shop | Price | Action |
|---|---|---|
| RS Components Ltd- UK | 18,12 GBP | Go to shop |
