IXYS HiperFET, Polar N-Channel MOSFET, 7 A, 800 V, 3-Pin TO-220 IXFP7N80P

IXYS HiperFET, Polar N-Channel MOSFET, 7 A, 800 V, 3-Pin TO-220 IXFP7N80P

IXYS

IXYS HiperFET, Polar N-Channel MOSFET, 7 A, 800 V, 3-Pin TO-220 IXFP7N80P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.44 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

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