Infineon HEXFET P-Channel MOSFET, 31 A, 55 V, 3-Pin TO-220AB IRF5305PBF
Infineon
Infineon HEXFET P-Channel MOSFET, 31 A, 55 V, 3-Pin TO-220AB IRF5305PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 60 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.54mm
Compare prices (1 shop)
| shop | Price | Action |
|---|---|---|
| RS Components Ltd- UK | 1,15 GBP | Go to shop |
