Measurement and Modeling of Silicon Heterostructure Devices

Name: Measurement and Modeling of Silicon Heterostructure Devices
Brand: CRC Press

CRC Press

When you see a nicely presented set of data, the natural response is: \u201CHow did they do that; what tricks did they use; and how can I do that for myself?\u201D Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data.